Chemically enhanced double-gate bilayer graphene field-effect transistor with neutral channel for logic applications

摘要

In this article, we present the simulation, fabrication, and characterization of a novel bilayer graphene field-effect transistor exhibiting electron mobility up to ～1600 cm~2 V~(?1) s~(?1), a room temperature I_(on)/I_(off)≈ 60, and the lowest total charge (～10~(11) cm~(?2)) reported to date. This is achieved by combined electrostatic and chemical doping of bilayer graphene, which enables one to switch off the device at zero top-gate voltage. Using density functional theory and atomistic simulations, we obtain physical insight into the impact of chemical and electrostatic doping on bandgap opening of bilayer graphene and the effect of metal contacts on the operation of the device. Our results represent a step forward in the use of bilayer graphene for high-performance logic devices in the beyond-complementary metal?oxide?semiconductor (CMOS) technology paradigm.