DOUBLE-GATE FIELD-EFFECT TRANSISTOR OF MOS TYPE WITH INDUCED CHANNEL

• 1. 带通道截止沟槽的双栅极氧化物沟槽MOSFET及三或四掩膜工艺 [P] . 中国专利： CN102254826B . 2014.02.26
• 2. 带通道截止沟槽的双栅极氧化物沟槽MOSFET及三或四掩膜工艺 [P] . 中国专利： CN102254826A . 2011-11-23
• 3. DOUBLE-GATE FIELD-EFFECT TRANSISTOR OF MOS TYPE WITH INDUCED CHANNEL [P] . PL325094A1 . 1999-08-30

  机译： 带感应通道的MOS型双栅极场效应晶体管

• 4. MOS FIELD-EFFECT TRANSISTOR WITH INDUCED CHANNEL [P] . PL170021B1 . 1996-10-31

  机译： 带感应通道的MOS场效应晶体管

• 5. MOS FIELD-EFFECT TRANSISTOR WITH INDUCED CHANNEL [P] . PL297078A2 . 1994-04-18

  机译： 带感应通道的MOS场效应晶体管

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• 5. Simulation Study of the Double-Gate Tunnel Field-Effect Transistor with Step Channel Thickness [O] . Maolin Zhang, Yufeng Guo, Jun Zhang, -1
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• 2. Low-Programmable-Voltage Nonvolatile Memory Devices Based on Omega-shaped Gate Organic Ferroelectric P(VDF-TrFE) Field Effect Transistors Using p-type Silicon Nanowire Channels [J] . Ngoc Huynh Van ,Jae-Hyun Lee ,Dongmok Whang . 安徽地质 . 2015,第001期
• 3. Types of voltage-dependent calcium channels involved in high potassium depolarization-induced amylase secretion in the exocrine pancreatic tumour cell line AR4-2J [J] . CUI ZONG JIE (Beijing Agricultural University Faculty of Biological Sciences Beijing 100094 China) . 细胞研究：英文版 . 1998,第1期
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• 5. 基于MoS2的1D/2D结型场效应晶体管的构筑和性能研究 [A] . 高宇 . 2019