Single-walled Carbon Nanotube Thin Film Transistor Made by Using Solution Process

摘要

Single-walled Carbon Nanotube (SWCNT) Thin Film Transistor (TFT) was made by using solution process. PFO-Bipy (PFOb) was chosen as the solubilizer to make SWCNT soluble, since PFOb was expected to give a high selectivity to select semiconducting SWCNT (s-SWCNT) with unique chirality (6,5) from solid SWCNT powder. More than five decades' on/off ratio of SWCNT TFT was achieved for a back gated device with drop coating method after annealing process. The results suggest that PFO-Bipy solubilizer is a promising candidate to select s-SWCNT and to prepare CNT solution for TFT application.