Excimer-laser-based melting/re-crystallization technologies are reviewed, especially focusing on our research works. By varying a solidification start time along the sample surface, lateral crystal growth takes place, resulting in grains of a few orders in size larger than the conventional ones. There are at least two ways for modulating the start time. The first is of non-uniform tight intensity and the second is of the non-uniform sample structure. Since the goal of the lateral growth method is of integration of various signal-processing functions on a glass substrate, there is a possibility that SOI technology becomes attractive again. And the method seems potentially useful for high-performance Si thin-film Solar cells.
展开▼
