Effects of dot size and its distribution on electron number control and distribution of potential in MOSFET memories based on silicon nanocrystal floating dots

摘要

Effects of dot size and dot size distribution on electron number control in silicon floating dot memories at room temperature are investigated by numerical calculation. As the dot size increases and the size distribution increases, the staircase feature disappears due to the averaging effects. It is found that, to obtain a distinct staircase feature, the size distribution should be less than 7% for the 8-nm-diameter dot size and 12% for the 3-nm-diameter dot. These results provide good guidelines for setting device parameters for fabricating silicon floating dot memories.