硅纳米晶粒基MOSFET存储器的荷电特征研究

摘要

The charging characteristics of the MOSFET memory based on Sinanocrystals with various channel dimensions are investigated in the temperature range of 20-300K.Large threshold voltage shifts up to 1.8V are obtained,being obviously dependent on the channel width,and independent of the channel length.It is experimentally found that the threshold voltage shift and charge retention characteristics are almost independent of temperature.Single electron/hole charge/discharge processes are observed in the device with the narrowest channel.%本文研究了硅纳米晶粒MOSFET存储器的荷电特征.器件阈值电压偏移达1.8V以上，并随着沟道宽度的变窄而增加，而与沟道长度基本无关.同时，阈值涨落也随宽度的变窄而增大.在20～300K测量温度范围内，器件阈值偏移和电荷的存储特性几乎不随温度变化，说明荷电过程主要由直接隧穿决定.进一步，在最窄沟道器件中观察到单电荷的荷电过程.