Application of Scanning Spreading Resistance Microscope for IC Industry

摘要

Although secondary ion mass spectrometry (SIMS) analysis provide good spatial resolution and wide dynamic range for IC industry on implantation engineering control, but it is only for 1D information. To observe high performance of 2D junction profiling of transistors is very important. Scanning spreading resistance microscopy (SSRM) has been shown to be the most promising candidate to provide the high resolution 2D carrier distributions and wide range of carrier concentrations. In this paper, the authors give the explanations about the principle of SSRM and why it can provide < 1 nm high spatial resolution information; meanwhile, we also introduce the most up to date of SSRM development in worldwide.