Potential of 600 V trench gate IGBT having lower on-state voltage drop than diodes

摘要

The trench gate structure has recently been widely introduced both for low-voltage 600V insulated-gate bipolar transistors (IGBTs) and high-voltage 4.5 kV IGBTs. The reason is because of the significant improvement that has been achieved in thetradeoff between device on-state voltage and switching speed.This paper outlines the ultimate limit design and characteristics of a next-generation trench gate IGBT, using a very thin substrate and a finer design rule in the trench gate IGBT. The proposed IGBT will realize a forward voltage drop even lower thanthat of a 600 V diode while retaining fast switching speed.