Trench IGBT with trench gates underneath contact areas of protection diodes

摘要

A trench PT IGBT (or NPT IGBT) having clamp diodes for ESD protection and prevention of shortage among gate, emitter and collector. The clamp diodes comprise multiple back-to-back Zener Diode composed of doped regions in a polysilicon layer doped with dopant ions of a first conductivity type next to a second conductivity type disposed on an insulation layer above said semiconductor power device. Trench gates are formed underneath the contact areas of the clamp diodes as the buffer layer for prevention of shortage.