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60 GHz-band monolithic HEMT amplifiers using BCB thin-film layers

机译:使用BCB薄膜层的60 GHz波段单片HEMT放大器

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Millimeter-wave monolithic microwave integrated circuits (MMICs) for commercial use have attracted much attention in applications such as 60 GHz wireless LANs and 76 GHz automotive radar.We have developed 60 GHz-band monolithic high-electron mobility transistor (HEMT) amplifiers adopting benzo-cyclo-butene (BCB) thin-film layers on GaAs substrates. The adoption of the BOB thin-film layers enabled the MMIC to incorporate both a thin-filmmicrostrip line with the advantages of great flexibility in layout and small size, and a coplanar waveguide with the advantage of low loss.The newly developed MMIC is 22.5% smaller and the frequency bandwidth 11 times wider than a conventional MMIC. A gain of 15.8 dB at 59.5 GHz was obtained.
机译:商用毫米波单片微波集成电路(MMIC)在60 GHz无线局域网和76 GHz汽车雷达等应用中引起了广泛关注。我们开发了采用苯并的60 GHz波段单片高电子迁移率晶体管(HEMT)放大器GaAs基板上的β-环丁烯(BCB)薄膜层。 BOB薄膜层的采用使MMIC既可以合并具有布局灵活性高和尺寸小的薄膜微带线,又可以合并具有低损耗的共面波导,新开发的MMIC为22.5%频率带宽比常规MMIC小11倍。在59.5 GHz处获得了15.8 dB的增益。

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