ON-/OFF-STATE DESIGN OF SEMICONDUCTOR DOPING PROFILES

摘要

We consider the multi-objective optimal dopant profiling of semiconductor devices. The two objectives are to gain a higher on-state current while the or-state current is kept small. This design question is treated as a constrained optimization problem,where the constraints are given by the stationary drift-diffusion model for the on-state and the linearized drift-diffusion model for the or-state. Using the doping profile as a state variable and the electrostatic potential as the new design variable,we obtain a simpler optimization problem,whose Karush-Kuhn-Tucker conditions partially decouple. Based on this observation we can construct a very efficient iterative optimization algorithm, which avoids solving the fully coupled drift-diffusion system. Due to the simple structure of the adjoint equations,this algorithm can be easily included into existing semi conductor simulation tools. The efficiency and success of this multi-objective design approach is underlined by various numerical examples.