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Analysis of power dissipation due to short-circuit current in CMOS logic circuits

机译:CMOS逻辑电路中由于短路电流引起的功耗分析

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摘要

A purpose of this paper is to establish a technique that can easily calculate power dissipation of logic Circuits due to a direct-path short-circuit current. Characteristics of the short-circuit power dissipation (P{sub}s) of an inverter have first been examined. It was found that P5 was a function of both rise- and fall-times (t) of an input voltage and an output load-capacitor (C). It was difficult to estimate both t and C for an individual single gate in a large circuitry 50 we have developed a simple P{sub}s expression of the inverter as a function of the number of logic gates parallel to this inverter and the number of fun-outs, instead of using t and C. P{sub}s expressions for other logic gates such as NANDs, NORs, etc. will be established so we could easily estimate P{sub}s of logic circuitries without using CAD tools.
机译:本文的目的是建立一种可以轻松计算由于直流短路电流而引起的逻辑电路功耗的技术。首先已经检查了逆变器的短路功率损耗(P {sub} s)的特性。发现P5是输入电压和输出负载电容器(C)的上升时间和下降时间(t)的函数。对于大型电路50中的单个单门,很难估计t和C,我们已经开发了逆变器的简单P {subss表达式,它是与该逆变器并联的逻辑门数量和晶体管数量的函数。而不是使用t和C。将建立用于其他逻辑门(例如NAND,NOR等)的P {sub}表达式,因此我们无需使用CAD工具即可轻松估算逻辑电路的P {sub}。

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