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Analysis of power dissipation due to short-circuit current in CMOS logic circuits

机译:CMOS逻辑电路短路电流由于短路电流的功耗分析

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摘要

A purpose of this paper is to establish a technique that can easily calculate power dissipation of logic Circuits due to a direct-path short-circuit current. Characteristics of the short-circuit power dissipation (P{sub}s) of an inverter have first been examined. It was found that P5 was a function of both rise- and fall-times (t) of an input voltage and an output load-capacitor (C). It was difficult to estimate both t and C for an individual single gate in a large circuitry 50 we have developed a simple P{sub}s expression of the inverter as a function of the number of logic gates parallel to this inverter and the number of fun-outs, instead of using t and C. P{sub}s expressions for other logic gates such as NANDs, NORs, etc. will be established so we could easily estimate P{sub}s of logic circuitries without using CAD tools.
机译:本文的目的是建立一种技术,该技术可以通过直接路径短路电流来容易地计算逻辑电路的功耗。 首先检查了逆变器的短路功耗(P {Sub})的特性。 发现P5是输入电压和输出负载电容器(C)的上升和次数(t)的函数。 很难估计大电路50中的单个单个门的T和C,我们已经开发了逆变器的简单P {Sub}表达式作为与该逆变器平行的逻辑栅极数的函数和数量的函数 将建立有趣,而不是使用T和C. P {Sub}的表达式,例如NANDS,NORS等的其他逻辑门,所以我们可以在不使用CAD工具的情况下轻松估计逻辑电路的P {SUB} S。

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