Electrical Properties of Delta-Doped Silicon-NanowireField-Effect Transistors

摘要

We report on complementary delta-doping (δ-doping) and the electrical transport properties insingle-crystal silicon nanowires (SiNWs) synthesized by using chemical vapor deposition via a vapor-liquid-solid growth process. Self-limited δ-doping layers were formed on intrinsic SiNW surfaceswith either phosphine (PH_3) or diborane (B_2H_6) molecular precursors and were then capped withintrinsic Si shell layers. Gate-dependent transport measurements showed that these δ-doped SiNWsbehaved as either p-type or n-type channels in field-effect transistors (FETs) with transconductancesof 150 nS and 130 nS and carrier mobilities of 45 cm~2/Vs and 40 cm~for p-type n-typeSiNW FETs, respectively.