Structural and Electrical Characterizations of Low-Dielectric-ConstantSiOC(-H) Thin Films Deposited by Using Plasma-Enhanced ChemicalVapor Deposition for ULSI Interconnects

摘要

SiOC(-H) thin films with low-dielectric-constants have been prepared by using plasma-enhancedchemical vapor deposition. I-V and C-V characteristics of the SiOC(-H) films were measured for themetal-insulator-semiconductor structure, Al/SiOC(-H)/p-Si(100), in order to study the interfacebehavior. The bonding characteristics and the chemical groups present in the SiOC(-H) films wereinvestigated by using Fourier-transform infrared (FTIR) spectroscopy in the absorbance modeand X-ray photoelectron spectroscopy (XPS). The presence of Si-O and Si-CH_3bonding in theSiOC(-H) film affects the electrical properties of the SiOC(-H) film at the Al/SiOC(-H)/p-Si(100)interface. The ratio of Si-O-Si to Si-O-C can be suitably modified by choosing the proper flow rateratio of the precursors during the preparation of the SiOC(-H) thin film.