Plasma Liquid-Vapor Activation (PLVA) Effect ofthe Semiconductor Etching Process for Photoresist Residues

摘要

During the removal of a photoresist (PR) by suing the semiconductor etching process, PR residueshave caused many problems. The liquid waste from semiconductor- cleaning- related chemicals hasbeen a big problem because of the environmental pollution by contaminated wafer. For that reason,we have suggested a plasma liquid-vapor activation (PLVA) method that it was very effective forthe semiconductor cleaning process because it accelerates the reaction rate of liquid chemicals. Theremoval rate of PR stripper with the PLVA method was proven to be faster than that of usualmethod. By the same analogy, we can conclude that the PLVA method would be very effective forremoving organic contaminants from the silicon surface.