Color photoresist removing method for use during color filter fabrication, involves performing sequentially plasma ashing, wet etching, and plasma ashing processes on substrate to remove residue of color photoresist on substrate

摘要

The method involves performing a plasma ashing process to remove color photoresist (24) on a surface of a substrate e.g. wafer, with a predetermined structure. A wet etch is performed on the substrate with hydroxyl amine (HDA), and another plasma ashing process is sequentially performed at specific temperature on the substrate to remove the residue of the photoresist on the substrate.