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Plasma ashing process for removing photoresist and residues during ferroelectric device fabrication
Plasma ashing process for removing photoresist and residues during ferroelectric device fabrication
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机译:等离子灰化工艺在铁电器件制造过程中去除光刻胶和残留物
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摘要
A low temperature plasma ashing process for use with substrates comprising a ferroelectric material. The process generally includes plasma ashing the photoresist and residues at a temperature of about room temperature to about 140° C., wherein the plasma is generated from a gas mixture consisting essentially of hydrogen and an inert gas, and wherein the ferroelectric material is exposed to the plasma.
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