Dielectric investigations of PLT(28) thin film prepared by reactive magnetron sputter

摘要

Paraelectric PLT(lead lanthanium titanate) thin films were prepared by dc magnetron sputtering with multi element metal target. In order to crystallize the as-deposited PLT thin films to the cubic perovskite phase, post-heat treatment was applied at the temperatures from 450 to 750 deg C. The composition of PLT(28) thin film was: Pb, 0.72; La, 0.28; Ti, 0.88; O, 2.9. The dielectric characteristics were essentially dependent on the changes in the chemical composition and crystalline phase with variation of annealing treatment. The dielectric constant increased and dissipation factor decreased slightly, as the post-annealing temperature increased. The dielectric constant and dissipation factor at low electric field measurement of the capacitors with highest dielectric properties were 1216 and 0.018, respectively.