A 140 mV 0.8 μA CMOS voltage reference based on sub-threshold MOSFETs

摘要

A CMOS voltage reference circuit based on sub-threshold MOSFETs is proposed, which utilizes a temperature-dependent threshold voltage, a peaking current mirror and sub-threshold technology. The reference has been fabricated in an SMIC 0.13 μm CMOS process with only MOS transistors and resistors. The experimental results show a reference voltage variation of 2 mV for a supply voltage ranging from 0.5 to 1.2 V and 0.8 mV for temperatures from -20 to 120 ℃. The proposed circuit generates a reference voltage of 140 mV and consumes a supply current of 0.8 μA at room temperature. The occupied area is only 0.019 mm~2.