Cleaning method of InSb [1 1 1] B of n-InSb [111] A/B for the growth of epitaxial layers by liquid phase epitaxy

摘要

The crystal structure of InSb [111] A/B surfaces shows that this structure is polarized. This means that the surfaces of InSb [111] A and InSb [1 1 1] B contain two different crystallized directions and they have different physical and chemical properties. Experiments were carried out on the InSb [111] A/B surfaces, showing that tartaric acid etchant could create a very smooth surface on the InSb [1 1 1] B without any traces of oxides and etch pit but simultaneously create etch pit on InSb [111] A surfaces. After lapping and polishing, some particles remained on the InSb [1 1 1] B surface, they could not be removed easily by standard cleaning process and if these particles remain on the surface of the substrate, the growth layer was not uniform and some island-like regions were observed. The purpose of this work is to remove these particles on the InSb [1 1 1] B surface. Some morphology images of both surfaces, InSb [111] A/B, will be presented.