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Liquid-phase epitaxy growth system and method for growing epitaxial layer

机译:液相外延生长系统和生长外延层的方法

摘要

The liquid-phase epitaxy system having the LPE boat consists of of a slider section, a source holder section, and a contacting well section, in which the distance between the first two contacting wells is different from that between the first two source holding wells, so that the concentration of the solutions can be controlled by the proper temperature profile, since the solution for melt-etch and the remaining solution for the epitaxial growth are not filled into the contacting wells at the same time.PPThus, the present invention can easily perform the in-situ melt-etch and can improve the quality of the epitaxial layer and the epitaxial yield by minimizing the contamination of the melt-etched surface of the substrate.
机译:具有LPE舟皿的液相外延系统由一个滑块部分,一个源支架部分和一个接触井部分组成,其中前两个接触井之间的距离不同于前两个接触源井之间的距离,这样就可以通过适当的温度曲线来控制溶液的浓度,因为用于熔融蚀刻的溶液和用于外延生长的其余溶液不会同时填充到接触孔中。

因此因此,通过使基板的熔融蚀刻表面的污染最小化,本发明可以容易地进行原位熔融蚀刻并且可以提高外延层的质量和外延产率。

著录项

  • 公开/公告号US5334278A

    专利类型

  • 公开/公告日1994-08-02

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号US19910752856

  • 发明设计人 SONG J. LEE;

    申请日1991-08-30

  • 分类号C30B19/06;

  • 国家 US

  • 入库时间 2022-08-22 04:31:26

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