Ultra high-speed InP/InGaAs SHBTs with f_t and f_(max) of 185 GHz

摘要

An InP/InGaAs single heterojunction bipolar transistor (SHBT) with high maximum oscillation frequency (f_(max)) and high cutoff frequency (f_t) is reported. Efforts have been made to maximize f_(max) and f_tsimultaneously including optimizing the epitaxial structure, base–collector mesa over-etching and base surface preparation. The mea-sured f_t and f_(max) both reached 185 GHz with an emitter size of 1 × 20 μm~2, which is the highest f_(max) for SHBTs in mainland China. The device is suitable for ultra-high speed digital circuits and low power analog applications.