L_g = 25 nm InGaAs/InAlAs high-electron mobility transistors with both f_T and f_(max) in excess of 700 GHz

摘要

In this paper, we report an L-g = 25 nm InGaAs/InAlAs HEMT on InP substrate that delivers excellent high-frequency characteristics. The device exhibited a value of maximum transconductance (g(m_max)) = 2.8 mS mu m(-1) at V-DS = 0.8 V and on-resistance (R-ON) = 279 Omega mu m. At I-D = 0.56 mA mu m(-1) and V-DS = 0.5 V, the same device displayed an excellent combination of f(T) = 703 GHz and f(max) = 820 GHz. To the best of the authors' knowledge, this is the first demonstration of a transistor with both f(T) and f(max) over 700 GHz on any material system. (C) 2019 The Japan Society of Applied Physics