Quantum simulation study of double gate hetero gate dielectric and LDD doping graphene nanoribbon p–i–n tunneling FETs

摘要

We perform a theoretical study of the effects of the lightly doped drain (LDD) and high-k dielectric on the performances of double gate p–i–n tunneling graphene nanoribbon field effect transistors (TFETs). The models are based on non-equilibrium Green's functions (NEGF) solved self-consistently with 3D-Poisson's equations. For the first time, hetero gate dielectric and single LDD TFETs (SL-HTFETs) are proposed and investigated. Simulation results show SL-HTFETs can effectively decrease leakage current, sub-threshold swing, and increase on–off current ratio compared to conventional TFETs and Si-based devices; the SL-HTFETs from the 3p + 1 family have better switching characteristics than those from the 3p family due to smaller effective masses of the former. In addition, comparison of scaled performances between SL-HTFETs and conventional TFETs show that SL-HTFETs have better scaling properties than the conventional TFETs, and thus could be promising devices for logic and ultra-low power applications.