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Gated Quantum Resonant Tunneling Diode Using CMOS Transistor with Modified Pocket and LDD Implants
Gated Quantum Resonant Tunneling Diode Using CMOS Transistor with Modified Pocket and LDD Implants
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机译:使用带有改进型Pocket和LDD注入的CMOS晶体管的门控量子谐振隧穿二极管
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摘要
A gated resonant tunneling diode (GRTD) is disclosed including a metal oxide semiconductor (MOS) gate over a gate dielectric layer which is biased to form an inversion layer between two barrier regions, resulting in a quantum well less than 15 nanometers wide. Source and drain regions adjacent to the barrier regions control current flow in and out of the quantum well. The GRTD may be integrated in CMOS ICs as a quantum dot or a quantum wire device. The GRTD may be operated in a negative conductance mode, in a charge pump mode and in a radiative emission mode.
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