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首页> 外文期刊>Journal of Semiconductors >Effect of power variation on microstructure and surface morphology of HgCdTe films deposited by RF magnetron sputtering
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Effect of power variation on microstructure and surface morphology of HgCdTe films deposited by RF magnetron sputtering

机译:功率变化对射频磁控溅射沉积HgCdTe薄膜组织和表面形貌的影响

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摘要

Mercury cadmium telluride films were grown by the RF magnetron sputtering technique at different sputtering powers. In experiment, X-ray diffraction (XRD) and atomic force microscopy (AFM) have been used to characterize the microstructure of HgCdTe films. The experimental results showed that when the growth power increased, the growth rate of HgCdTe films increased; when the growth power was less than 30 W, the HgCdTe film deposited by RF magnetron sputtering was amorphous; when the growth power was more than 30 W, the films exhibited polycrystalline structure. Films deposited at different growth rates were found to have characteristically different formations and surface morphologies; as observed through AFM, the surface morphology is composed of longitudinal islands forming a maze-like pattern in the high deposition rate. AFM analysis also illustrated that a significant reduction in the areal density of large islands and characteristically smoother films was achieved using a low deposition rate.
机译:通过射频磁控溅射技术以不同的溅射功率生长碲化汞镉薄膜。在实验中,X射线衍射(XRD)和原子力显微镜(AFM)已被用来表征HgCdTe薄膜的微观结构。实验结果表明,随着生长功率的增加,HgCdTe薄膜的生长速率增加;当生长功率小于30W时,RF磁控溅射沉积的HgCdTe膜为非晶态。当生长功率大于30W时,膜表现出多晶结构。发现以不同生长速率沉积的膜具有特征性的不同形成和表面形态。如通过原子力显微镜观察的那样,表面形态由纵向岛组成,这些岛在高沉积速率下形成迷宫状图案。 AFM分析还表明,使用低沉积速率可大大降低大岛的面密度并降低特征膜的光滑度。

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