The effect of the configuration of the resistive system of heating of a cell for growing diamond single crystals using heat sinks on the distribution of temperature fields in the growth volume was studied. By the finite-difference method we have defined the temperature distribution in the growth volume in growing diamond single crystals using heat sinks of nickel and silicon carbide. Judging from the results obtained, the use of heat sinks is promising in growing separate diamond monocrystals for single-crystal tools.
展开▼
