Excess arsenic and point defects in GaAs grown by molecular beam epitaxy at low temperatures

摘要

Defect formation in low temperature molecular beam epitaxy GaAs layers (LT-GaAs) is discussed. The influence of growth conditions (temperature, III/V flux ratio) on internal structure, type, and concentration of electrically and optically active point defects is discussed. The effect of annealing on the formation of arsenic precipitates (clusters) is considered.