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LOW TEMPERATURE GROWN LAYERS WITH MIGRATION ENHANCED EPITAXY ADJACENT TO AN InGaAsN(Sb) BASED ACTIVE REGION
LOW TEMPERATURE GROWN LAYERS WITH MIGRATION ENHANCED EPITAXY ADJACENT TO AN InGaAsN(Sb) BASED ACTIVE REGION
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机译:与基于InGaAsN(Sb)的活动区域相邻的迁移增强表位的低温生长层
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摘要
A laser system having migration enhanced epitaxy grown substantially flat layers proximate to quantum wells of an active region. The flat layers may be grown at low temperature. This growth may result in flatter interfaces in the nitrogen containing quantum wells within the active region as well as lower trap densities in adjacent material. This may achieve a reduced trap density as well as reduced segregation resulting in a spectral luminescence profile revealing a single narrow peak with a high level of photoluminescence.
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