Structural and optical features of InGaAs quantum dots grown on Si(001) substrates

摘要

A multilayer GaAs/SiGe/Si heterostructure with InGaAs quantum dots (QDs) embedded in a GaAs layer was grown by molecular beam epitaxy (MBE) on a Si(001) substrate. A step-graded Si1-xGex (0less than or equal toxless than or equal to1) buffer layer and a GaAs layer with InyGa1-yAs (ysimilar to0.5) QDs were deposited consecutively in two different MBE systems. The heterostructure exhibits intense photoluminescence in the region of 1.3 mum at room temperature. Perfect crystal InGaAs island,, with height less than 10 nm are the sources of this radiation. [References: 10]