Excitation region comprising nanodots (also referred to as 'quantum dots') in a matrix crystal grown on Si substrate and made of AlyInxGa1-y-xN crystal (y ≧ 0, x 0) with zincblende structure (also called 'cubic'). and light-emitting device (LED and LD) obtained by using the same

摘要

A light-emitting device comprising: a Si substrate (1); a buffer layer (2) formed on the Si substrate (1), the buffer layer (2) containing a BP crystal; an N-type GaN-based crystal (3) formed on the buffer layer (2) containing the BP crystal; and an excitation region comprising a sphalerite-type AlyInxGa1-y-xN basic crystal (y≥0, x 0) (5) formed on the n-type GaN-based crystal (3) and quantum dots (6 ) of AlyInxGa1-y-xN (y ≥ 0, x 0) formed inside the AlyInxGa1-y-xN base crystal (y ≥ 0, x 0) (5) of the sphalerite type and a higher In concentration containing as the AlyInxGa1-y-xN basic crystal (y≥0, x 0) (5) of the sphalerite type, and an In layer having a thickness of about 1 atomic layer between the buffer layer (2) and the crystal (3 ) based on GaN or an InGaN layer having a thickness of 0.5 to 2 nm and a comparatively high In content or an InAl mixed layer having a thickness of about 1 atomic layer and a comparatively high In content.