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The investigation of carbon nitride films prepared at various arc currents by vacuum cathode arc method

机译:真空阴极电弧法研究不同电弧电流下氮化碳膜的研究

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The carbon nitride films have been prepared in the arc currents range of 20-60 A at the Ar/N-2 atmosphere of 50/400 sccm by the vacuum cathode are deposition method. The properties of the films were characterized by x-ray photoelectron spectroscopy, Raman spectroscopy, Fourier transform infrared spectroscopy and nanoindentation. The N concentration showed a maximum of 35 at% at 20 A and decreased gradually with the arc currents. The films below 40 A consisted of linear polymeric-like component and sp(2) graphitic cluster. With the increasing of the arc current from 20 to 40 A, the I-D/I-G rose and the photoluminescence (PL) fell gradually, which resulted from the development of the sp(2) graphitic phase and the decrease of the polymeric-like phase. As a result, the CC bonds increased and sp(3)CN and Sp(2)CN decreased. Above 40 A, with the increasing of are currents, I-D/I-G fell and the PL increased gradually, which reflected the decreasing of sp(2) graphitic phase and the modification of C and N atoms in sp(2) cluster. The CC bonds and sp(3)CN fell and the sp(2)CN rose. The nanohardness of films showed increasing tendency with the arc currents. The variation of the relative ratio and the average energy of N-containing species and C-containing species at the atmosphere would be responsible for the change in the properties of films. [References: 25]
机译:通过真空阴极沉积法,在Ar / N-2气氛为50/400 sccm的条件下,以20-60 A的电弧电流范围制备了氮化碳膜。通过X射线光电子能谱,拉曼光谱,傅立叶变换红外光谱和纳米压痕表征膜的性能。 N浓度在20 A时显示最大值为35 at%,并且随着电弧电流逐渐降低。低于40 A的薄膜由线性聚合物状成分和sp(2)石墨簇组成。随着电弧电流从20 A增加到40 A,I-D / I-G上升,光致发光(PL)逐渐下降,这是由于sp(2)石墨相的发展和类聚合物相的减少所致。结果,CC键增加而sp(3)CN和Sp(2)CN减少。在40 A以上,随着电流的增加,I-D / I-G下降,PL逐渐增加,这反映了sp(2)石墨相的减少以及sp(2)簇中C和N原子的修饰。 CC债券和sp(3)CN下跌,sp(2)CN上涨。薄膜的纳米硬度随着电弧电流的增加而呈现增加的趋势。大气中含N和C的相对比率和平均能量的变化是造成薄膜性能变化的原因。 [参考:25]

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