Temperature-dependent exciton recombination in asymmetrical ZnCdSe/ZnSe double quantum wells

摘要

Temperature-dependent exciton recombination in asymmetrical ZnCdSe/ZnSe double quantum wells is studied by recording photoluminescence spectra and photoluminescence decay spectra. The exciton tunneling from the wide well to the narrow well and the thermal dissociation of excitons are two factors that influence the exciton recombination in this structure. In the narrow well, both of the two processes decrease the emission intensity, whereas, in the wide well, these two processes have contrary influences on the exciton density. The change of the emission intensity depends on which is the stronger one.