Optical and electrical characterization of alpha-InGaZnO thin film fabricated by pulsed laser deposition for thin film transistor applications

摘要

Highly transparent and amorphous InGaZnO thin films with high mobility were deposited on fused silica by pulsed laser deposition. The films remained amorphous after annealing at 700 degrees C and had bandgaps in the range 3.50-3.62 eV. The film deposited at 5 Pa and room temperature exhibits a Hall mobility of 54 cm(2) V-1 s(-1). An alpha-InGaZnO thin film transistor with high-k Ba0.6Sr0.4TiO3 as a dielectric layer and operating in enhanced mode with a saturation mobility of 5.8 cm(2) V-1 s(-1) and on/off ratio of 2 x 10(5) is demonstrated.