EUV Resist Testing Status and Post Lithography LWR Reduction

摘要

Extreme Ultraviolet (EUV) lithography is a leading technology option for manufacturing at the 22nm half pitch node and beyond. Implementation of the technology will require continued progress on several key supporting infrastructure challenges, including EUV photoresist materials. The main development issue regarding EUV photoresists is simultaneously achieving the high resolution, high sensitivity, and low line width roughness (LWR) required. This paper describes our strategy, the current status of EUV materials, and some integrated post-development LWR reduction efforts. Data collected utilizing Intel's Micro-Exposure Tool (MET) is presented in order to examine the feasibility of establishing a resist process that simultaneously exhibits =22nm half-pitch (HP) L/S resolution at =113mJ/cm~2 with =3nm LWR