Comparison of EB Exposure Characteristics between HSQ and Calix Arene of High Resolution Negative Resist

摘要

In present, fine processing technology is required with high functionalization in semiconductor, electro-optic device, memory and other industrials. So, the fabrication of fine patterns is an important assignment. High resolution resist is necessary for fabricating the fine patterns by electron-beam (EB) lithography. Resists widely used as high resolution negative resist are the inorganic hydrogen silsesquioxane (HSQ) and the organic Calix Arene.