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METHODS AND MATERIALS FOR LITHOGRAPHY OF A HIGH RESOLUTION HSQ RESIST
METHODS AND MATERIALS FOR LITHOGRAPHY OF A HIGH RESOLUTION HSQ RESIST
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机译:高分辨率HSQ抗蚀剂的光刻方法和材料
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摘要
A method of fabricating a substrate-HSQ resist material in which the substrate is selected from germanium (Ge) or gallium arsenide (GaAs) comprises the steps of pretreating a surface of the substrate to provide halogen termination of the substrate surface such that surface oxide is removed, and applying a HSQ resist to the surface. Removal of surface oxide allows the use of aqueous HSQ developers without causing damage to the surface. Also disclosed is a substrate-HSQ resist material, in which the substrate is selected from germanium or gallium arsenide, suitable for use in nanodevice fabrication and comprising a germanium or gallium arsenide substrate having a surface bearing a high resolution HSQ resist film or layer, in which the substrate has a halogen terminated surface.
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