We fabricated clamped-clamped resonators by anisotropic etching of silicon-on-insulator wafers with a (110)-oriented top layer. The geometry of the resonator and its clamping points is confined by silicon (111) planes. The slow etch rate of these planes yields low surface roughness and enables accurate control over the resonator dimensions, and thus over its resonance frequencies. Lateral resonators were fabricated and characterized, and the measured resonance frequencies match closely with the calculated values for stress-free silicon beams. The resonance frequency can be tuned by electrostatic forces exerted via gate electrodes. The described method enables the fabrication of high-aspect-ratio silicon resonators without the need for deep reactive ion etching.
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