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Fabrication of vertical sidewalls on (110) silicon substrates for use in Si/SiGe photodetectors
Fabrication of vertical sidewalls on (110) silicon substrates for use in Si/SiGe photodetectors
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机译:用于Si / SiGe光电探测器的(110)硅基板上的垂直侧壁的制造
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摘要
A method of fabricating vertical sidewalls on silicon (110) substrates for use in Si/SiGe photodetectors includes preparing a silicon (110) layer wherein the silicon (110) plane is parallel to an underlying silicon wafer surface. Masking the silicon (110) layer with mask sidewalls parallel to a silicon (111) layer plane and etching the silicon (110) layer to remove an un-masked portion thereof, leaving a patterned silicon (110) layer having vertical silicon (111) sidewalls. Removing the mask; growing SiGe-containing layers on the patterned silicon (110) layer; and fabricating a photodetector.
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