High resolution x-ray mask fabrication by a 100 keV electron-beam lithography system

摘要

With a view to meeting the requirements of high resolution microelectromechanical system applications, we studied high resolution (submicron scale) and high aspect ratio pattern fabrication through x-ray lithography. As a critical part of the x-ray lithography, an x-ray mask should have the properties of high resolution and being a thick absorber. To decrease the scattering effect, a 100 keV e-beam lithography system was used for the fabrication of the high resolution x-ray mask. 3 mum thick PMMA (polymethylmethacrylate) resist was patterned and 2 mum thick gold was electroplated onto the patterned resist to form the x-ray mask. Scanning electron microscopy analysis showed that the sidewall and pattern uniformity were sufficient and that the proximity effect did not play a significant role for the selected test patterns. 6 mum thick PMMA resist was exposed by the x-ray mask; the experimental results proved the feasibility of reproducing submicron features. 0.5 mum nested patterns with an aspect ratio of 12 were fabricated by this approach.