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Water immersion optical lithography at 193 nm

机译:193 nm的水浸式光刻

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摘要

Historically, the application of immersion optics to microlithography has not been seriously pursued because of the alternative technologies available. As the challenges of shorter wavelength become increasingly difficult, immersion imaging becomes more feasible. We present results from research into 193-nm excimer laser immersion lithography at extreme propagation angles. This is being carried out in a fluid that is most compatible in a manufacturable process, namely water. By designing a system around the optical properties of water, we are able to image with wavelengths down to 193 nm. Measured absorption is below 0.50 cm{sup}(-1) at 185 nm and below 0.05 cm{sup}(-1) at 193 nm. Furthermore, through the development of oblique angle imaging, numerical apertures approaching 1.0 in air and 1.44 in water are feasible. The refractive index of water at 193 nm allows for exploration of the following: k{sub}1 values near 0.25 leading to half-pitch resolution approaching 35 nm at a 193-nm wavelength; polarization effects at oblique angles (extreme NA); immersion and photoresist interactions with polarization; immersion fluid composition, temperature, flow, and microbubble influence on optical properties (index, absorption, aberration, birefringence); mechanical requirements for imaging, scanning, and wafer transport in a water media; and synthesizing conventional projection imaging via interferometric imaging.
机译:从历史上看,由于可用的替代技术,没有认真地将浸没光学应用于微光刻。随着更短波长的挑战变得越来越困难,浸没成像变得更加可行。我们介绍了在极端传播角度对193 nm准分子激光浸没光刻技术的研究结果。这是在可制造过程中最相容的流体(即水)中进行的。通过围绕水的光学特性设计系统,我们能够以低至193 nm的波长成像。在185 nm处测得的吸收低于0.50 cm {sup}(-1),在193 nm处测得的吸收低于0.05 cm {sup}(-1)。此外,通过斜角成像的发展,在空气中接近1.0的数值孔径在水中接近1.44的数值孔径是可行的。水在193 nm处的折射率允许探索以下内容:k {sub} 1值接近0.25,导致在193 nm波长处半间距分辨率接近35 nm;斜角的偏振效应(极限NA);浸没和光致抗蚀剂与偏振的相互作用;浸没液成分,温度,流量和微气泡对光学性能(折射率,吸收率,像差,双折射)的影响;在水介质中成像,扫描和晶圆运输的机械要求;并通过干涉成像合成常规的投影成像。

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