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Approaching the numerical aperture of water - Immersion lithography at 193nm

机译:接近水的数值孔径 - 在193nm处的浸没式光刻

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摘要

As immersion nanolithography gains acceptance for next generation device applications, experimental data becomes increasingly important. The behavior of resist materials, fluids, coatings, sources, and optical components in the presence of a water immersion media presents conditions unique compared to convention “dry” lithography. Several groups have initiated fundamental studies into the imaging, fluids, contamination, and integration issues involved with water immersion lithography at 193nm. This paper will present the status and results of the next stage of the development efforts carried out at RIT. The status of two systems are presented; a small field projection microstepper utilizing a 1.05 catadioptric immersion objective lens and a 0.50 to 1.26NA interferometric immersion exposure system based on a compact Talbot prism lens design. Results of the fundamental resolution limits of resist materials and of imaging optics are presented. Additionally, an exploration into the benefits of increasing the refractive index of water is addressed through the use of sulfate and phosphate additives. The potential of KrF, 248nm immersion lithography is also presented with experimental resist imaging results.
机译:随着沉浸式纳米光刻技术在下一代设备应用中的接受,实验数据变得越来越重要。与常规“干法”光刻法相比,在存在水浸介质的情况下,抗蚀剂材料,流体,涂层,光源和光学组件的行为呈现出独特的条件。几个小组已经开始对与193nm的水浸式光刻技术有关的成像,流体,污染和集成问题进行基础研究。本文将介绍RIT进行的下一阶段开发工作的现状和结果。介绍了两个系统的状态;一个小视场投影微步进器,其基于紧凑的Talbot棱镜透镜设计,利用1.05折反射式物镜和0.50至1.26NA干涉式浸没式曝光系统。给出了抗蚀剂材料和成像光学器件的基本分辨率极限的结果。另外,通过使用硫酸盐和磷酸盐添加剂,探索了增加水的折射率的益处。还用实验抗蚀剂成像结果显示了KrF,248nm浸没式光刻的潜力。

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