A novel carbon rich crystalline (C) SiC-Si(n) interface using liquid polycarbosilane as a precursor - a unique Schottky junction

摘要

This paper presents a novel rectifying interface material using carbon rich crystalline (C)-SiC and n-type Si by a modified CVD technique, using liquid polycarbosilane as a precursor at 900 °C. The equilibrium band diagram and Fermi level alignment was explained using Poisson's model and the depletion approximation. The junction capacitance, depletion width and saturation current were evaluated and further discussed from the perspective of temperature dependency. The junction was found to be Schottky in nature, with a large breakdown voltage of 69 V and low space charge. This type of junction material, having good mechanical strength, is promising for high temperature and high power applications.