Schottky Barrier Lowering Effect on AlGaN/GaN Heterostructure Schottky Barrier Diodes Embedded with Au Nanoparticles

摘要

In this study, two different contacts, Ni Schottky contacts and Ni Schottky contacts with embedded Au-nanoparticles (Au-NPs) on AlGaN/GaN, were fabricated to demonstrate the modification of the Schottky barrier height (SBH). Embedding metal NPs into metal-Semiconductor (MS) interface effectively reduces the barrier height of the electrical contacts to AlGaN/GaN 2-DEG heterostructures. The SBH of the Ni contact with embedded Au-NPs decreased significantly by similar to 0.16 eV compared to the reference sample without NPs. The fabricated AlGaN/GaN SBDs with embedded Au-NPs had a turn-on voltage of similar to 1.7 V and an on-resistance of similar to 12.5 Omega.mm.