首页> 外文OA文献 >On the Identification of Buffer Trapping for Bias-Dependent Dynamic RON of AlGaN/GaN Schottky Barrier Diode With AlGaN:C Back Barrier

【2h】

On the Identification of Buffer Trapping for Bias-Dependent Dynamic RON of AlGaN/GaN Schottky Barrier Diode With AlGaN:C Back Barrier

机译：基于AlGaN：C背势垒的AlGaN / GaN肖特基势垒二极管随偏压变化的动态RON的缓冲阱的识别

页面导航

摘要
著录项
相似文献
相关主题

摘要

status: published

机译：状态：已发布

著录项

作者
Hu Jie; Stoffels Steve; Lenci Silvia; Groeseneken Guido; Decoutere Stefaan;
展开▼
作者单位

展开▼
年度 2016
总页数
原文格式 PDF
正文语种 en
中图分类

相似文献

外文文献
中文文献
专利

1. On the Identification of Buffer Trapping for Bias-Dependent Dynamic of AlGaN/GaN Schottky Barrier Diode With AlGaN:C Back Barrier [J] . Jie Hu, Steve Stoffels, Silvia Lenci, IEEE Electron Device Letters . 2016,第3期

机译：基于AlGaN：C背势垒的AlGaN / GaN肖特基势垒二极管随偏压变化的缓冲阱的识别
2. Leakage and trapping characteristics in Au-free AlGaN/GaN Schottky barrier diodes fabricated on C-doped buffer layers [J] . Jie Hu, Steve Stoffels, Silvia Lenci, Physica status solidi . 2016,第5期

机译：C掺杂缓冲层上制造的无金AlGaN / GaN肖特基势垒二极管的泄漏和俘获特性
3. Effects of negative bias stress on trapping properties of AlGaN/GaN Schottky barrier diodes [J] . Ferrandis Philippe, Charles Matthew, Gillot Charlotte, Microelectronic Engineering . 2017,第juna期

机译：负偏置应力对AlGaN / GaN肖特基势垒二极管的俘获性能的影响
4. Impact of AlGaN barrier recess on the DC and dynamic characteristics of AlGaN/GaN schottky barrier diodes with gated edge termination [C] . Jie Hu, Steve Stoffels, Silvia Lenci, 2016 Compound Semiconductor Week Includes 28th International Conference on Indium Phosphide amp; Related Materials amp; 43rd International Symposium on Compound Semiconductors . 2016

机译：AlGaN势垒凹槽对带有栅极边缘终端的AlGaN / GaN肖特基势垒二极管的直流特性和动态特性的影响
5. Study of CMOS compatible ruthenium oxide Schottky contacts for AlGaN/GaN and InAlN/GaN diodes and high mobility transistors grown on silicon (111) substrates. [D] . Kyaw, Lwin Min. 2015

机译：用于AlGaN / GaN和InAlN / GaN二极管以及在硅（111）衬底上生长的高迁移率晶体管的CMOS兼容氧化钌肖特基接触的研究。
6. Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction [O] . Tao Sun, Xiaorong Luo, Jie Wei, -1

机译：双异质结硅衬底上AlGaN / GaN肖特基势垒二极管的理论和实验研究
7. Effects of negative bias stress on trapping properties of AlGaN/GaN Schottky barrier diodes [O] . Philippe Ferrandis, Matthew Charles, Charlotte Gillot, 2017

机译：负偏压对AlGaN / GaN肖特基屏障二极管捕获性能的影响
8. Donors, Acceptors, and Traps in AlGaN and AlGaN/GaN Epitaxial Layers [R] . Look, D. C. 2006

机译：alGaN和alGaN / GaN外延层中的供体，受体和陷阱

On the Identification of Buffer Trapping for Bias-Dependent Dynamic RON of AlGaN/GaN Schottky Barrier Diode With AlGaN:C Back Barrier

摘要

著录项

相似文献

相关主题

期刊订阅