Modeling of the Inversion Charge Density in the Nanoscale Symmetric Double Gate MOSFET: An Analytical Approach

摘要

In this paper we have considered a nanoscale symmetric double gate (SDG) MOSFET for the analytical modeling of the inversion charge density by solving Poisson's equation in a two-dimensional boundary value potential approach. The inversion charge density estimation gives the idea for the evaluation of the threshold voltage, drain current and other important parameters of the device. In this paper the variation of the inversion charge density with the distance along the channel at different applied drain to source and gate to source voltages is presented. For the first time the variation of inversion charge density with the distance along the channel for various region of operation is presented in this paper. The result obtained have been compared and contrasted with the reported results for the purpose of the validation.