Even adjustment, the end of a process for the preparation of a double - gate mosfet, as well as produced by the method of double - gate mosfet

摘要

A process for the preparation of a double - gate - mosfet comprising the steps of:(a) forming a first insulator layer (4) on a layer structure, comprising a carrier substrate (1), a semiconductor layer (3) is arranged between them, as well as a buried layer (2),(b) formation of a protective layer (5) formed on the first insulator layer (4),(c) production of a mesa structure (1, 2a, 3a, 4a, 5a) by means of machining of the layer structure (1, 2, 3, 4, 5) to the surface of the carrier substrate for the fixing of the width of the source - and drain regions in the double - gate - mosfet,(d) selective, lateral under-etching of the first insulator layer (4a) is formed and the buried layer (2a),(e) selective removal of the protective layer (5a),(f) preparation of the source - - and drain regions (3b) as well as the channel layer (3c) in the semiconductor layer (3),(g) forming a second insulator layer (6) on the existing layer structure (1, 2b, 3b and 3c, 4b),(h) forming an opening in the mesa structure, with a depth up to the carrier substrate (1) or to..