Even adjustment, the end of a process for the preparation of a double - gate mosfet

摘要

The invention describes a itself adjustment, the end of a process for the preparation of a double - gate - transistor. The device regions (3b: source / drain, 3c: channel), in the first step by means of selective, lateral undercutting of a first insulating layer is formed and a buried selectively etchable layer produced in a layer structure. The two selectively etchable layers are then etched back from the side so that the tunnel (t1, t2) and under the channel (3c) are formed. These are according to the formation of the gate dielectrics (7) on the semiconductor layer filled with an electrically conductive gate material. The upper and lower gate (8) are thus both with respect to one another and to the source - - and drain regions (3b) perfectly adjusted.