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Fabrication of Porous Noble Metal Thin-Film Electrode by Reactive Magnetron Sputtering

机译:磁控溅射法制备多孔贵金属薄膜电极

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Porous platinum films have been fabricated by reactive sputtering combined with subsequent thermal annealing. Using the SEM, XRD, XPS, and polarization resistance measurement techniques, the microstructural development of the film and its resultant electrochemical properties have been characterized. Pore evolution was understood as a result of the thermal grooving of platinum during annealing process. We demonstrated that crystallization should be followed by agglomeration for the evolution of porous microstructures. Furthermore, reaction sputtering affected the adhesion enhancement between the film and substrate compared to the film deposited by non-reactive sputtering. The polarization resistance of the porous platinum film was five times lower than that of the dense platinum film. At 600℃ the resistance of the porous film was 5.67 Ω·cm~2, and that of the dense film was 38 Ω·cm~2.
机译:已经通过反应溅射结合随后的热退火来制造多孔铂膜。使用SEM,XRD,XPS和极化电阻测量技术,已表征了薄膜的微结构发展及其所得的电化学性能。孔隙的产生是由于退火过程中铂的热切槽造成的。我们证明,结晶后应附聚,以形成多孔微结构。此外,与通过非反应性溅射沉积的膜相比,反应溅射影响了膜与基底之间的粘附性增强。多孔铂膜的极化电阻比致密铂膜的极化电阻低五倍。在600℃下,多孔膜的电阻为5.67Ω·cm〜2,致密膜的电阻为38Ω·cm〜2。

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